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Effet photomagnétoélectrique intervallée dans le siliciumGRIGOR'EV, N. N; ZYKOV, V. G; SERDEGA, B. K et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 10, pp 1764-1768, issn 0015-3222Article

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CONDUCTIVITY OF A MANY-VALLEY SEMICONDUCTOR IN A HEATING ELECTROMAGNETIC WAVEDROZHOV YU P.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; DDR; DA. 1980; VOL. 99; NO 1; PP. 163-172; ABS. RUS; BIBL. 25 REF.Article

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The kinetic distribution function in multi-valley semiconductors evolving at the momentum relaxation scaleCHENG, M.-C.Journal of physics. D, Applied physics (Print). 1997, Vol 30, Num 6, pp 1038-1048, issn 0022-3727Article

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NEGATIVE RESISTANCE AND PEAK VELOCITY IN THE CENTRAL (000) VALLEY OF III-V SEMICONDUCTORSHAUSER JR; GLISSON TH; LITTLEJOHN MA et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 5; PP. 487-493; BIBL. 21 REF.Article

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